3SK206

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for Low Crss: High GPS: Low NF: use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. 2.9±0.2 PACKAGE DIMENSIONS in millimeters 0.4 –0.05 1.5 +0.2 –0.1 2.8 –0.3 +0.2 2 0.95 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 10 –4.5 –4.5 80 200 125 –55 to +125 V V V mA mW °C °C 3 (1.9) 0.95 1 +0.1 –0.05 4 5° 5° 1.1 +0.2 –3.1 0.8 0.4 +0.1 –0.05 0.6 5° 1. 2. 3. 4. 0 to 0.1 5° ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Power Gain Noise Figure SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | Ciss Crss GPS NF 16.0 25 1.0 35 1.5 0.02 20.0 1.1 2.5 2.0 0.035 MIN. 10 10 80 –3.5 –3.5 10 10 TYP. MAX. UNIT V mA V V Source Drain Gate 2 Gate 1 TEST CONDITIONS VG1S = –4 V, VG2S = 0, ID = 20 µA VDS = 5 V, VG1S = 0, VG2S = 0 VDS = 5 V, VG2S = 0, ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 0, VG1S = –4 V, VG2S = 0 VDS = 0, VG2S = –4 V, VG1S = 0 VDS = 5 V, VG2S = 1 V, ID = 1...