3SK253

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low VDD Use Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 3 0.4 +0.1 – 0.05 4 0.4 +0.1 – 0.05 0.95 Low Noise Figure : High Power Gain : Suitable for use as RF amplifier in UHF TV tuner. Automatically Mounting : Package : 4 Pins Mini Mold ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1: RL ≥ 10 kΩ *2: Free air VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg 18 ± 8*1 ± 8*1 18 18 25 200*2 125 –55 to +125 V V 0.85 1 V V 1.1 +0.2 – 0.1 5° 5° V mA mW °C °C 0.8 5° 0 to 0.1 5° PIN CONNECTIONS 1. 2. 3. 4. Source Drain Gate2 Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields. Document No. P10583EJ2V0DS00 (2nd edition) (Previous No. TD-2372) Date Published August 1995 P Printed in Japan © 0.16 +0.1 – 0.06 0.4 +0.1 – 0.05 0.6 +0.1 –0.05 (1.9) 1993 3SK253 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Ga...