DatasheetsPDF.com

3SK257 Dataheets PDF



Part Number 3SK257
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N Channel Dual Gate MOS Type FET
Datasheet 3SK257 Datasheet3SK257 Datasheet (PDF)

TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. • Low noise figure: NF = 2.0dB (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 13.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipati.

  3SK257   3SK257


Document
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. • Low noise figure: NF = 2.0dB (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 13.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipation PD 100 mW Channel temperature Tch 125 °C Storage temperature range Tstg −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA TOSHIBA ― 2-2K1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.006 g (typ.) absolute maximu.


3SK256 3SK257 3SK258


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)