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TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK257
3SK257
TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications
Superior cross modulation performance. • Low noise figure: NF = 2.0dB (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 13.5 V
Gate 1-source voltage
VG1S ±8 V
Gate 2-source voltage
VG2S ±8 V
Drain current
ID 30 mA
Drain power dissipation
PD 100 mW
Channel temperature
Tch 125 °C
Storage temperature range
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA TOSHIBA
― 2-2K1B
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
Weight: 0.006 g (typ.)
absolute maximu.