3SK259

3SK259 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK259 TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.025 pF (typ.) · Low noise figure: NF = 2.6dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 100 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.006 g (typ.) Characteristics Gate 1 leakage current Gate 2 leakage current Drain-source voltage Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test...