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3SK295

Silicon N-Channel Dual Gate MOS FET

Description

3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features Low noise figure. NF = 2.0 dB typ. at f = 900 MHz Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G...

Hitachi Semiconductor

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