LV2327E40R

DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. Input and output matching cell improves the impedances and facilitates the design of wideband circuits. APPLICATIONS handbook, halfpage LV2327E40R QUICK REFERENCE DATA Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit. MODE OF OPERATION CW; linear amplifier f (MHz) VCE (V) 1 IC (A) PL1 (W) ≥4 GPO (dB) ≥7 Zi (Ω) 11 + j3 ZL (Ω) 7.5 − j9 2.3 to 2.7 16 PINNING - SOT445B PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange. 3 2 Top view MAM315 c b 3 e Marking code: 2327E40R. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium...