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LVE21050R Dataheets PDF



Part Number LVE21050R
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet LVE21050R DatasheetLVE21050R Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirely ion implanted • Gold metallization ensures an optimum temperature profile with excellent performance and reliability • Input matching cell.

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DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirely ion implanted • Gold metallization ensures an optimum temperature profile with excellent performance and reliability • Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R PINNING - SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 1 c b 3 DESCRIPTION Top view 2 MAM251 e NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A circuit. MODE OF OPERATION Class-A (CW) f (GHz) 2.1 VCC (V) 16 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. IC (A) 1.1 PL1 (W) typ. 5.5 Gpo (dB) typ. 8 Zi; ZL (Ω) see Fig 4 1997 Feb 14 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb ≤ 75 °C CONDITIONS open emitter RBE = 47 Ω open base open collector − − − − − − −65 − at 0.3 mm from case; t ≤ 10 s − MIN. LVE21050R MAX. 40 20 16 3 2 18 +200 200 235 V V V V A W UNIT °C °C °C handbook, halfpage 10 MGL004 handbook, 20 MGD971 IC (A) Ptot (W) 16 1 12 10−1 (1) (2) 8 4 10−2 1 10 15 VCE (V) 102 0 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 47 Ω. Fig.3 Fig.2 DC SOAR. Power dissipation derating as a function of mounting base temperature. 1997 Feb 14 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL ICBO ICER ICEO IEBO hF.


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