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LWE2010S Dataheets PDF



Part Number LWE2010S
Manufacturers NXP
Logo NXP
Description NPN microwave power transistor
Datasheet LWE2010S DatasheetLWE2010S Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the charact.

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DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common emitter class A power amplifiers at frequencies up to 2.3 GHz. handbook, halfpage LWE2010S QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION class A (CW) f (GHz) 2.3 VCE (V) 18 IC (mA) 110 PL1 (W) ≥0.8 Gpo (dB) ≥8 ZI/ZL (Ω) see Figs 6 and 7 PINNING - SOT446A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange. 1 c 3 b e 2 MAM313 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.1 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C CONDITIONS open emitter RBE = 250 Ω open base open collector − − − − − − −65 − − MIN. LWE2010S MAX. 40 20 15 3 250 4.8 +200 200 235 UNIT V V V V mA W °C °C °C MGA250 MGA249 1 handbook, halfpage IC (A) 6 handbook, halfpage Ptot (W) 4 10−1 2 (1) (2) 10−2 1 10 VCE (V) 102 0 −50 0 50 100 150 200 250 Tmb (oC) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 250 Ω. Ptot max = 4.8 W. Fig.3 Fig.2 DC SOAR. Maximum power dissipation derating as a function of mounting base temperature. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 110 mA − − − 15 MIN. PARAMETER CONDITIONS MAX. 22 2 LWE2010S UNIT K/W K/W thermal resistance from junction to mounting base Tj = 75 °C thermal resistance from mounting base to heatsink note 1 MAX. 75 500 200 150 UNIT µA µA nA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION Class A (CW); note 1 Note 1. In narrowband test circuit shown in Fig.4. f (GHz) 2.3 VCE (V) 18 IC (mA) 110 PL1 (W) ≥0.8; typ. 0.9 Gpo (dB) ≥8; typ. 9 ZI (Ω) 5.2 + j 16.5 ZL (Ω) 7.5 + j 8.75 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S handbook, full pagewidth 30 mm 30 mm 1 5 2.5 (3x) 4.5 8.5 10 5 5 3 1 3 40 mm 0.6 4 9 4.5 3 3 40 mm MBC717 handbook, full pagewidth C1 C2 L1 input C3 L2 output C4 MBC718 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Prematching test circuit board. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor List of components (see Fig.4) COMPONENT L1 L2 C1, C2 C3, C4 DESCRIPTION 3 turns 0.2 mm copper wire with ferrite bead 5 turns 0.5 mm copper wire feedthrough bypass capacitor DC block capacitor 100 pF VALUE DIMENSIONS int. dia. 2 mm int. dia. 2 mm LWE2010S CATALOGUE NO. Erie, ref. 1214-001 MGA251 1.2 handbook, halfpage PL (W) 0.8 0.4 0 0 0.05 0.1 0.15 Pi (W) 0.2 f = 2.3 GHz; VCE = 18 V; IC = 110 mA (regulated). Fig.5 Load power as a function of input power. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S 1 handbook, full pagewidth 0.5 2 2.3 GHz 0.2 2 GHz +j 0 –j 10 0.2 5 0.2 0.5 1 2 5 10 Zi 5 10 ∞ PL1 = 0.8 W; VCE = 18 V; Z.


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