DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2015R NPN microwave power transistor
Product specification Supersedes data of Nov...
DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2015R
NPN microwave power
transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance.
handbook, halfpage
LWE2015R
PINNING - SOT446A PIN 1 2 3 collector base emitter DESCRIPTION
APPLICATIONS Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION
2
1
c
3
b e
MAM313
NPN silicon planar epitaxial microwave power
transistor in a SOT446A metal ceramic studless package.
Marking code: 411
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 2.3 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispo...