Document
DISCRETE SEMICONDUCTORS
DATA SHEET
LX1214E500X NPN microwave power transistor
Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18
Philips Semiconductors
Preliminary specification
NPN microwave power transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.2 and 1.4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.
LX1214E500X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB. MODE OF OPERATION Class AB (CW) f (GHz) 1.2 to 1.4 VCE (V) 24 ICQ (A) 0.15 PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω)
typ. 50 typ. 11 typ. 50 see Figs 6 and 7
PINNING - SOT439A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
handbook, 4 columns
1
c b
3 2 Top view 3
e
MAM045
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Preliminary specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) input power total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C open emitter RBE = 220 Ω open base open collector CONDITIONS − − − − − f = 1.2 to 1.4 GHz; VCC = 24 V; class AB − −
LX1214E500X
MIN.
MAX. 45 30 25 3 9 7 70 +200 200 235
UNIT V V V V A W W °C °C °C
−65 − −
handbook, halfpage
10
MLC436
handbook, halfpage
80
MLC437
P tot IC (A) (W) 60
I 1 40
20
10 1 1 10 V CE (V)
10 2
0 0 50 100 150 200 o T mb ( C)
Tmb ≤ 75 °C. (1) Region of permissible DC operation.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Preliminary specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO V(BR)CBO V(BR)CER V(BR)EBO hFE PARAMETER collector cut-off current collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 22 mA IC = 150 mA; RBE = 220 Ω IC = 22 mA IC = 4.5 A; VCE = 3 V − 45 30 3 15 MIN. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 °C note 1
LX1214E500X
MAX. 1.3 0.2
UNIT K/W K/W
MAX. 4.5 − − − 100 V V V
UNIT mA
APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.2 to 1.4 VCE (V) 24 ICQ (A) 0.15 PL1 (W) typ. 50 Gpo (dB) typ. 11 ηC (%) typ. 50 Zi; ZL (Ω) see Figs 6 and 7
1997 Feb 18
4
Philips Semiconductors
Preliminary specification
NPN microwave power transistor
LX1214E500X
handbook, full pagewidth
30
30
4.5 1.0
6.0 2.5
4.0
4.5 2.5 5.0
5.0 3.0
8.0
8.0
1.0 5.0
40 0.7 2.5 3.0
11.0 10.5 0.7 5.0 7.0 5.0 4.0
40
input
C1
C3 F1 L1
V BB C4
VCC
L2
output
C2
MLC470
The test circuit is split into two independent halves each being 30 × 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10.
Fig.4 Test circuit.
1997 Feb 18
5
Philips Semiconductors
Preliminary specification
NPN microwave power transistor
LX1214E500X
handbook, full pagewidth
BIAS CIRCUIT
PREMATCHING TEST CIRCUIT VCC
R1 TR1 C4 C3
R2 F1 P1 D1 R3 C5 L1 DUT L2
D2
MLC727
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5) COMPONENT TR1 C1, C2 C3, C4 C5 D1 D2 L1 L2 P1 R1 R2 R3 F1 Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. DESCRIPTION transistor, BD239 or equivalent DC blocking chip c.