LXE18300X

DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. LXE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) 24 VCE (V) 0.3 ICQ (A) PL1 (W) ≥27 ≥8 GPO (dB) Class AB (CW) 1.85 PINNING - SOT439A PIN 1 2 3 collector base DESCRIPTION emitter connected to flange ook, 4 columns 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product ...