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M1MA142WAT1 Dataheets PDF



Part Number M1MA142WAT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description SC-70/SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
Datasheet M1MA142WAT1 DatasheetM1MA142WAT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WAT1/D Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. • Fast trr, < 10 ns • Low CD, < 15 pF • Available in 8 mm Tape and Reel Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WAT3 to order the 13.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141WAT1/D Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. • Fast trr, < 10 ns • Low CD, < 15 pF • Available in 8 mm Tape and Reel Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel. ANODE 3 M1MA141WAT1 M1MA142WAT1 Motorola Preferred Devices SC–70/SOT–323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT 3 1 2 CATHODE 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc CASE 419–02, STYLE 4 SC–70/SOT–323 Vdc mAdc mAdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage M1MA141WAT1 M1MA142WAT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Symbol IR VF VR CD trr(2) Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min — — — 40 80 — — Max 0.1 0.1 1.2 — — 15 10 Unit µAdc Vdc Vdc pF ns REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 M1MA141WAT1 M1MA142WAT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 µs tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100 Ω OUTPUT PULSE trr t A DEVICE MARKING — EXAMPLE Marking Symbol Type No. Symbol 141WA MN 142WA MO MNX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = – 40°C IR , REVERSE CURRENT (µA) 10 TA = 150°C 1.0 TA = 125°C 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data M1MA141WAT1 M1MA142WAT1 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC–70/SOT–323 POWER DISSIPATION The power dissipation of the SC–70/SOT–323 is a function of the collector pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) – TA RθJA the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into The 833 ° C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a power dissipation of 300 milliwatts can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the prehea.


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