M1MA151KT1

M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. Features Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Reverse Voltage M1MA151KT1 M1MA152KT1 VR 40 Vdc 80 Peak Reverse Voltage M1MA151KT1 M1MA152KT1 VRM 40 Vdc 80 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM (Note 1) 100 mAdc 225 mAdc 500 mAdc THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg − 55 to + 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. t = 1 SEC http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA SURFACE MOUNT 3 CATHODE 1 ANODE 2 NO CONNECTION SC−59 CASE 318D MARKING DIAGRAM Mx M G 1 Mx = Device Code x = H for 1...