Document
M1MA151AT1, M1MA152AT1
Preferred Device
Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications.
Features
• Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Pb−Free Packages are Available
http://onsemi.com
SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA
SURFACE MOUNT
ANODE 3
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Reverse Voltage
M1MA151AT1 M1MA152AT1
VR
Peak Reverse Voltage
M1MA151AT1 M1MA152AT1
VRM
Forward Current Peak Forward Current Peak Forward Surge Current
IF
IFM
IFSM (Note 1)
Value
40 80
40 80 100 225 500
Unit Vdc
Vdc mAdc mAdc mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD 200 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg − 55 to + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratin.