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FGH40N6S2

Fairchild Semiconductor

600V/ SMPS II Series N-Channel IGBT

FGH40N6S2 / FGP40N6S2 / FGB40N6S2 August 2003 FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT Ge...


Fairchild Semiconductor

FGH40N6S2

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Description
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 August 2003 FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features 100kHz Operation at 390V, 24A 200kHZ Operation at 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC Low Gate Charge . . . . . . . . . 35nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ Low Conduction Loss IGBT (co-pack) formerly Developmental Type TA49438 Package TO-247 E C G Symbol TO-220AB E C G C TO-263AB G G E COLLECTOR (Back-Metal) COLLECTOR (Flange) E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGE...




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