FGH50N3

FGH50N3 July 2002 FGH50N3 300V, PT N-Channel IGBT General Description The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485 Features Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ SCWT (@ TJ = 125°C). . . . . . . . . . . . . . . . . > 8µs 300V Switching SOA Capability Positive VCE(SAT) Temperature Coefficient above 50A Package E C G Symbol C TO-247 COLLECTOR (FLANGE) G E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS EARV PD TJ TSTG tSC Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Continuous, TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V Single Pulse Reverse Avalanche Ene...