DatasheetsPDF.com

FGR3000FX-90DA Dataheets PDF



Part Number FGR3000FX-90DA
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description THYRISTORS
Datasheet FGR3000FX-90DA DatasheetFGR3000FX-90DA Datasheet (PDF)

MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current .3000A q IT(AV) Average on-state current ...780A q VDRM Repetitive peak off state voltage ....4500V q Reverse conducting type 26 ± 0.5 0.4 MIN 0.4 MIN φ.

  FGR3000FX-90DA   FGR3000FX-90DA



Document
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current ...........3000A q IT(AV) Average on-state current .......................780A q VDRM Repetitive peak off state voltage ...................4500V q Reverse conducting type 26 ± 0.5 0.4 MIN 0.4 MIN φ 85 ± 0.2 φ 85 ± 0.2 φ 120 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VDRM VDSM VD(DC) VLTDS + : VGK = –2V Parameter Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Long term DC stability voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing RMS Reverse current Average reverse current Surge (non-repetitive) reverse current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 4500 4500 3600 3000 Conditions VDM = 4500V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz f = 60Hz, sine wave θ = 180°C, Tf = 75°C One half cycle at 60Hz One cycle at 60Hz VD = 3000V, IGM = 75A, Tj = 75°C Ratings 3000 1220 780 16 1.0 × 106 940 600 16 1.0 × 106 500 10 18 100 900 400 27 100 230 –40 ~ +125 –40 ~ +150 31 ~ 43 1450 Unit V V V V Unit A A A kA A2s A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM IT2t IR(RMS) IR(AV) IRSM IR2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 37 Standard value MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM VRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Peak reverse voltage drop Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, IRM = 3000A, Instantaneous measurment Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 3000V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 75A, VD = 3000V Tj = 125°C, ITM = 3000A, VDM = 4500V, diGQ/dt = –30A/µs VRG = 17V, CS = 6.0µF, LS = 0.2µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C GTO Side (Junction to fin) Diode Side (Junction to fin) Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 720 — — — Max 5.0 4.5 250 500 — 10 30 — 1.5 3000 0.016 0.025 Unit V V mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES MAXIMUM ON-STATE AND MAXIMUM REVERSE CHARACTERISTICS 104 7 Tj = 125°C 5 3 2 CURRENT (A) 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 8 REVERSE CHARACTERISTIC (DIODE PART) ON-STATE CHARACTERISTIC (GTO PART) RATED ON-STATE AND REVERSE SURGE CURRENT 20 SURGE CURRENT (kA) 15 DIODE PART, GTO PART 10 5 0 0 10 2 3 5 7 101 2 3 5 7 102 VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO FIN) 100 2 3 5 7 101 0.040 THERMAL IMPEDANCE (°C/ W) 0.035 0.030 DIODE PART GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE VOLTAGE (V) VFGM = 10V PFGM = 400W PFG(AV) = 100W VGT = 1.5V 0.025 0.020 GTO PART 0.015 0.010 0.005 DIODE PART Tj = 25°C IGT = 3000mA IFGM = 100A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Aug.1998 GTO PART MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, SINGLE-PHASE HALF WAVE) 5000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, SINGLE-PHASE HALF WAVE) 130 120 4000 FIN TEMPERATURE (°C) θ 180° θ 360° RESISTIVE, INDUCTIVE LOAD 360° RESISTIVE, 3000 INDUCTIVE LOAD θ = 30° 60° 110 100 90 80 70 60 θ = 30° 60° 120° 90° 2000 1000 90° 120° 180° 0 0 100 200 300 400 500 600 700 800 50 0 100 200 300 400 500 600 700 800 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, RECTANGULAR WAVE) 5000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, RECTANGULAR WAVE) 130 120 4000 180° 120° 90° 270° FIN TEMPERATURE.


FGR3000CV-90DA FGR3000FX-90DA FGR3000FX-90DA


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)