FH102

Ordering number : EN5874 NPN Epitaxial Planar Silicon Composite Transistor FH102 High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the MCP unit: mm package currently in use, improving the mounting 2149-MCP6 efficiency greatly. The FH102 is formed with two chips, being equivalent to the 2SC5226, placed in one package. Optimal for differential amplification due to excellent 6 thermal equilibrium and pair capability. 1 0.65 2.0 [FH102] 5 4 0 ‘0.1 1.25 2.1 0.2 0.25 0.425 0.15 2 3 0.425 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions Ratings 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 0.2 0.9 Mounted on ceramic board (250mm2×0.8mm), 1unit Mounted on ceramic board (250mm2×0.8mm) 20 10 2 70 300 500 150 –55 to +150 Unit V V V mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE hFE(small/large) VBE(small-large) fT Cob Cre Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5...