FH104

Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features · Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. · The FH104 is formed with two chips equivalent to the 2SC4853 placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection B1 B2 E2 1 2 0.65 2.0 3 0.2 0.425 Package Dimensions unit:mm 2149 [FH104] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 C1 E1 C2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions 0.9 TR1 TR2 Ratings 12 6 1.5 15 80 150 150 –55 to +150 0.2 0.25 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 Unit V V V mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Symbol ICBO IEBO hFE hFE VCB=10V, IE=0 VEB=1V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=1mA VCB=1V, IC=1mA 90 0.7 0.95 1.0 mV Conditions Ratings min typ max 1.0 10 200 Unit µA µA (small/large) (large-small) VBE Continued on next page. Note) The specifications shown ab...