FJA4310 — NPN Epitaxial Silicon Transistor
FJA4310
NPN Epitaxial Silicon Transistor
• Audio Power Amplifier • High Curr...
FJA4310 —
NPN Epitaxial Silicon
Transistor
FJA4310
NPN Epitaxial Silicon
Transistor
Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210
October 2008
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
IC=5mA, IE=0 IC=50mA, RBE=¥ IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A
hFE Classification
Classification hFE
R 50 ~ 100
O 70 ~ 140
Ratings 200 140 6 10 1.5 100 150
- 55 ~ 150
Units V V V A A W °C °C
Min. 200 140
6
50
Typ.
250 30
Max.
10 10 180 0.5
Units V V V mA mA
V pF MHz
Y 90 ~ 180
© 2008 Fairch...