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FJAF6916

Fairchild Semiconductor

NPN Triple Diffused Planar Silicon Transistor

FJAF6916 FJAF6916 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVC...


Fairchild Semiconductor

FJAF6916

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FJAF6916 FJAF6916 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1700V Low Saturation Voltage : VCE(sat) = 3V (Max.) For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 16 30 60 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8.5A IC=10A, IB=2.5A IC=10A, IB=2.5A VCC=200V, IC=8A, RL=25Ω IB1=1.6A, IB2=-3.2A 1700 800 6 10 6 9 3 1.5 4 0.3 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V V V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise ...




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