FJNS3212R

FJNS3212R FJNS3212R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47KΩ) Complement to FJNS4212R 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 300 150 -55 ~ 150 Units V V V mA mW °C °C E R B Equivalent Circuit C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA 32 3.7 250 47 62 100 Min. 40 40 0.1 600 0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS3212R Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. ...