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FJP13007 Dataheets PDF



Part Number FJP13007
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet FJP13007 DatasheetFJP13007 Datasheet (PDF)

FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU FJP13007H1TU FJP13007H1TU_F080 FJP13007H2TU FJP13007H2TU_F080 Top Mark J13007 J13007-1 J13007-1 J13007-2 .

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU FJP13007H1TU FJP13007H1TU_F080 FJP13007H2TU FJP13007H2TU_F080 Top Mark J13007 J13007-1 J13007-1 J13007-2 J13007-2 Package TO-220 3L (Dual Gauge) TO-220 3L (Single Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge) Packing Method Rail Rail Rail Rail Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range 700 400 9 8 16 4 80 150 -65 to 150 V V V A A A W °C °C © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 www.fairchildsemi.com FJP13007 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Values are at TC = 25°C unless otherwise noted. Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Emitter Cut-Off Current DC Current Gain(1) DC Current Gain(1) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time Conditions IC = 10 mA, IB = 0 VEB = 9 V, IC = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 5 A IC = 2 A, IB = 0.4 A IC = 5 A, IB = 1 A IC = 8 A, IB = 2 A IC = 2 A, IB = 0.4 A IC = 5 A, IB = 1 A VCE = 10 V, IC = 0.5 A VCB = 10 V, f = 0.1 MHz VCC = 125 V, IC = 5 A, IB1 = -IB2 = 1 A, RL = 25 Ω Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. Min. 400 8 5 4 Typ. 110 Max. 1 60 30 1.0 2.0 3.0 1.2 1.6 1.6 3.0 0.7 Unit V mA V V MHz pF μs μs μs hFE Classification Classification hFE1 H1 15 ~ 28 H2 26 ~ 39 © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 2 www.fairchildsemi.com FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics 100 VCE = 5V 10 hFE, DC CURRENT GAIN Cob[pF], OUTPUT CAPACITANCE 1 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain 10 1000 100 10 1 0.1 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance 10000 1000 VCC=125V IC=5IB tSTG 100 tF 10 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Turn-Off Time 10 tSTG, tF [ns], TURN OFF TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE tR, tD [ns], TURN ON TIME 10 IC = 3 IB 1 VBE(sat) 0.1 VCE(sat) 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 2. Saturation Voltage 100 1000 tR 100 tD, VBE(off)=5V VCC=125V IC=5IB 10 0.1 1 IC[A], COLLECTOR CURRENT Figure 4. Turn-On Time 10 IC[A], COLLECTOR CURRENT 100 10 DC 1 10μs 1ms 100μs 0.1 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Biased Safe Operating Area © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 3 www.fairchildsemi.com FJP13007 — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 100 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 10000 Figure 7. Reverse Biased Safe Operating Area 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TC[oC], CASE TEMPERATURE Figure 8. Power Derating © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 4 www.fairchildsemi.com FJP13007 — High Voltage Fast-Switching NPN Power Transistor Physical Dimensions Figure 9. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB © 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0 5 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Awinda® AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ F-PFS¥ FRFET® Global Power ResourceSM GreenBri.


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