Document
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
November 2014
FJP13007 High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply
1 TO-220 1.Base 2.Collector 3.Emitter
Ordering Information
Part Number FJP13007TU FJP13007H1TU FJP13007H1TU_F080 FJP13007H2TU FJP13007H2TU_F080
Top Mark J13007 J13007-1 J13007-1 J13007-2 J13007-2
Package TO-220 3L (Dual Gauge) TO-220 3L (Single Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge)
Packing Method Rail Rail Rail Rail Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO VCEO VEBO
IC ICP IB PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range
700 400
9 8 16 4 80 150 -65 to 150
V V V A A A W °C °C
© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0
www.fairchildsemi.com
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol BVCEO IEBO hFE1 hFE2
VCE(sat)
VBE(sat)
fT Cob tON tSTG tF
Parameter Collector-Emitter Breakdown Voltage Emitter Cut-Off Current DC Current Gain(1) DC Current Gain(1)
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Current Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time
Conditions
IC = 10 mA, IB = 0 VEB = 9 V, IC = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 5 A IC = 2 A, IB = 0.4 A IC = 5 A, IB = 1 A IC = 8 A, IB = 2 A IC = 2 A, IB = 0.4 A IC = 5 A, IB = 1 A VCE = 10 V, IC = 0.5 A VCB = 10 V, f = 0.1 MHz
VCC = 125 V, IC = 5 A, IB1 = -IB2 = 1 A, RL = 25 Ω
Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Min. 400 8 5
4
Typ. 110
Max.
1 60 30 1.0 2.0 3.0 1.2 1.6
1.6 3.0 0.7
Unit V mA
V
V MHz pF μs μs μs
hFE Classification
Classification hFE1
H1 15 ~ 28
H2 26 ~ 39
© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0
2
www.fairchildsemi.com
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics
100
VCE = 5V
10
hFE, DC CURRENT GAIN
Cob[pF], OUTPUT CAPACITANCE
1 0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
10
1000
100
10
1 0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000 1000
VCC=125V IC=5IB
tSTG
100 tF
10 0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn-Off Time
10
tSTG, tF [ns], TURN OFF TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
tR, tD [ns], TURN ON TIME
10
IC = 3 IB
1 VBE(sat)
0.1 VCE(sat)
0.01 0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 2. Saturation Voltage
100
1000
tR 100
tD, VBE(off)=5V
VCC=125V IC=5IB
10 0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn-On Time
10
IC[A], COLLECTOR CURRENT
100
10 DC
1
10μs 1ms 100μs
0.1
0.01 1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Forward Biased Safe Operating Area
© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0
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www.fairchildsemi.com
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Typical Performance Characteristics (Continued)
IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION
100
Vcc=50V, IB1=1A, IB2 = -1A L = 1mH
10
1
0.1
0.01 10
100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
Figure 7. Reverse Biased Safe Operating Area
100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0
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www.fairchildsemi.com
FJP13007 — High Voltage Fast-Switching NPN Power Transistor
Physical Dimensions
Figure 9. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2005 Fairchild Semiconductor Corporation FJP13007 Rev. 1.1.0
5
www.fairchildsemi.com
TRADEMARKS
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