FJPF13007

FJPF13007 High Voltage Fast-Switching NPN Power Transistor FJPF13007 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220F 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 -65 ~ 150 Units V V V A A A W °C °C ©2005 Fairchild Semiconductor Corporation FJPF13007 Rev. C 1 www.fairchildsemi.com FJPF13007 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics TC = 25°C unless otherwise noted Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage fT Cob tON tSTG tF Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% Conditions IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 25Ω hFE Classific...