FJPF3835
FJPF3835
Power Amplifier
• High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A
1
TO-220F 2...
FJPF3835
FJPF3835
Power Amplifier
High Current Capability : IC=8A High Power Dissipation Wide S.O.A
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 200 120 8 8 16 30 150 - 55 ~ 150
Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG
* Pulse Test : PW=20µs
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
* DC
Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω
Min. 200 120 8
Typ.
Max.
Units V V V
0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68
mA mA V V MHz pF µs µs µs
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
FJPF3835
Typical Characteristics
7
1000
IB = 35mA
6
VCE = 4V
IC [A], COLLECTOR CURRENT
hFE...