FJV4103R
FJV4103R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driv...
FJV4103R
FJV4103R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22KΩ, R2=22KΩ) Complement to FJV3103R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
R1 B R2
C
R 73
PNP Epitaxial Silicon
Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -5mA 15 0.9 22 1 -0.5 -3.0 29 1.1 200 5.5 56 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJV4103R
Typical Characteristics
-100
-1000
V CE = - 5V R1 = 22K R2 = 22K
VCE = - 0....