FJV992

FJV992 FJV992 Audio Frequency Low Noise Amplifier Complement to FJV1845 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 300 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob NV Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Emitter Breakdown Voltage Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VEB= -6V, IC=0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE=0, f=1MHz -0.55 50 3 40 150 200 Min. -120 -120 -5 -30 800 -300 -0.65 mV V MHz pF mV Max. Units V V V nA hFE2 Classification Classification hFE2 P 200 ~ 400 Marking F 300 ~ 600 E 400 ~ 800 2J P hFE Classification ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 FJV992 Typical Characteristics -1.0 IB = -1.2µ A IB = -1.2µ A IB = -1.0µ A IB = -0.8µ A -10 IB = -24µ A -0.8 IC[mA], COLLECTOR CURR...