FJX1182

FJX1182 FJX1182 Low Frequency Power Amplifier 3 2 SOT-323 1. Base 2. Emitter 3. Collector 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -35 -30 -5 -500 150 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB= -35, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA V CE= -6V, IC= -400mA IC= -100mA, IB= -10mA IC= -100mA, VCE= -1V IC= -20mA, VCE= -6V VCB= -6V, IE= 0 f=1MHz 70 25 -0.1 -0.8 200 13 Min. Typ. Max. -0.1 -0.1 240 -0.25 -1.0 V V MHz pF Units µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 Marking SD X Grade ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJX1182 Typical Characteristics -200 -180 1000 IB =-1.6mA VCE = -1V IC[mA], COLLECTOR CURRENT -160 -140 -120 -100 -80 -60 -40 -20 IB =-1.0mA IB =-0.8mA IB =-0.6mA IB =-0.4mA IB =-0.2mA hFE, DC CURRENT GAIN IB =-1.4mA IB =-1.2mA 100 10 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMI...