Document
FJX3904
FJX3904
General Purpose Transistor
3
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature
SOT-323 1. Base 2. Emitter 3. Collector
1
Value 60 40 6 200 350 -55 ~ 150
Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB=5V, IE=0, f=1MHz VCE=20V, IC=10mA IC=100µA, VCE=5V, RS=1KΩ f=10Hz to 15.7KHz VCC=3V, VBE=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA 300 5 70 250 0.65 40 70 100 60 30 Min. 60 40 6 50 Max. Units V V V nA
300
VCE(sat) VBE(sat) Cob fT NF tON tOFF
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time
0.2 0.3 0.85 0.95 4
V V V V pF MHz dB ns ns
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Marking
S1A
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJX3904
Typical Characteristics
240
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
VCE = 1V
200
IC = 10 IB
hFE, DC CURRENT GAIN
160
1
VBE(sat)
120
80
0.1
VCE(sat)
40
0 0.1
1
10
100
0.01 0.1 1 10 100
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
6
1000
5
IE = 0 f = 1MHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VCE = 20V
Cob [pF], CAPACITANCE
4
3
100
2
1
0 1 10 100
10 0.1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FJX3904
Package Dimensions
SOT-323
2.00±0.20
3°
1.25±0.10
2.10±0.10
0.95±0.15
0.90 ±0.10
+0.05 0.05 –0.02 1.00±0.10 0.275±0.100
1.30±0.10
3°
+0.04 0.135 –0.01
0.10 Min
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIR.