FJX4006R

FJX4006R FJX4006R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10KΩ, R2=47KΩ) Complement to FJX3006R 3 2 SOT-323 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C 1 S56 PNP Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -1mA 7 0.19 10 0.21 -0.3 -1.4 13 0.24 5.5 200 68 -0.3 V pF MHz V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002 FJX4006R Typical Characteristics 1000 -100 VCE = - 5V R1 = 10K R2 = 47K VI(on)...