FJX733

FJX733 FJX733 Low Frequency Amplifier Collector-Base Voltage VCBO= -60V Complement to FJX945 2 3 SOT-323 1. Base 2. Emitter 3. Collector 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100, IE=0 IC= -10mA. IB=0 IE = -10. IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0 f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Rs=10K -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 Min. -60 -50 -5 -100 -100 700 -0.3 -0.80 V V MHz pF dB Typ. Max. Units V V V nA nA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Marking Y 120 ~ 240 G 200 ~ 400 L 350 ~ 700 SBX Grade ©2002 Fairchild Semiconductor Corporation Rev. B2, August 2002 FJX733 Typical Characteristics -...