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FJYF2906

Fairchild Semiconductor

PNP Multi-Chip General Purpose Amplifier

FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier • Collector-Emitter Voltage: VCEO = 40V • Amplifier and Swit...


Fairchild Semiconductor

FJYF2906

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FJYF2906 FJYF2906 PNP Multi-Chip General Purpose Amplifier Collector-Emitter Voltage: VCEO = 40V Amplifier and Switching Application E2 is on pin 1 C2 B1 B2 (Pin1) C1 E1 E2 SOT-563F Mark: S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 40 40 5 150 -55 ~ +150 Units V V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICEX hFE Parameter Test Condition IC = 1MA, IB = 0 Min. 40 40 5 50 60 80 100 60 30 Typ. Max. Units V V V NA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * IE = 10µA, IC = 0 VCE = 30V, VBE = 3V VCE = 1V, IC = 0.1MA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCE = 20V, IC = 10mA f = 100MHz VCB = 5V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz IC = 10µA, IE = 0 On Characteristics 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.3 0.5 0.65 0.95 1 V V V V MHz Small Signal Characteristics fT Cobo Cibo Current gain Bandwidth Product Output Capacitance Input Capacitance 250 4.5 10 pF pF * Pulse Test: Pulse Width ≤ 300ms, Dut...




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