Document
MITSUBISHI Nch POWER MOSFET
FK18SM-9
HIGH-SPEED SWITCHING USE
FK18SM-9
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.41Ω ¡ID ......................................................................................... 18A ¡Integrated Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 450 ±30 18 54 18 54 250 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK18SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 ±30 — — 2 — — 7.0 — — — — — — — — — — Typ. — — — — 3 0.32 2.88 10.0 2200 300 45 40 80 200 80 1.5 — — Max. — — ±10 1 4 0.41 3.69 — — — — — — — — 2.0 0.50 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω
IS = 9A, VGS = 0V Channel to case IS = 18A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 tw=10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse
200
150
100
50
0
0
50
100
150
200
7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
CASE TEMPERATURE TC (°C)
MITSUBISHI Nch POWER MOSFET
FK18SM-9
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 250W VGS = 20V 10V 6V 20 TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25°C Pulse Test 6V PD = 250W
DRAIN CURRENT ID (A)
40
16
30
12
5V
20 5V 10 4V 0 0 10 20 30 40 50
8
4 4V 0 .