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FK18SM-9 Dataheets PDF



Part Number FK18SM-9
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Power MOSFET
Datasheet FK18SM-9 DatasheetFK18SM-9 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS 450V ¡rDS (ON) (MAX) .. 0.41Ω ¡ID ....

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MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.41Ω ¡ID ......................................................................................... 18A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 450 ±30 18 54 18 54 250 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 7.0 — — — — — — — — — — Typ. — — — — 3 0.32 2.88 10.0 2200 300 45 40 80 200 80 1.5 — — Max. — — ±10 1 4 0.41 3.69 — — — — — — — — 2.0 0.50 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case IS = 18A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 tw=10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse 200 150 100 50 0 0 50 100 150 200 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 250W VGS = 20V 10V 6V 20 TC = 25°C Pulse Test DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25°C Pulse Test 6V PD = 250W DRAIN CURRENT ID (A) 40 16 30 12 5V 20 5V 10 4V 0 0 10 20 30 40 50 8 4 4V 0 .


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