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FKPF10N80 Dataheets PDF



Part Number FKPF10N80
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Application Explanation
Datasheet FKPF10N80 DatasheetFKPF10N80 Datasheet (PDF)

FKPF10N80 FKPF10N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 1 2 3 TO-220F 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V Symbol .

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FKPF10N80 FKPF10N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 1 2 3 TO-220F 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V Symbol IT (RMS) ITSM I2t di/dt PGM PG (AV) VGM IGM TJ TSTG Viso Parameter RMS On-State Current Surge On-State Current I2t for Fusing Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Isolation Voltage Conditions Commercial frequency, sine full wave 360° conduction, TC=86°C Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz Rating 10 100 110 50 50 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min. Typ. Max. 3.4 Units °C/W ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 FKPF10N80 Electrical Characteristics TC=25°C unless otherwise noted Symbol IDRM VTM Parameter Repetieive Peak Off-State Current On-State Voltage I II III IGT VGD IH IL dv/dt (dv/dt)C Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125°C, Exponential Rise 10 300 I II III TJ=125°C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=12V, RL=20Ω VD=12V, RL=20Ω Test Condition VDRM applied TC=25°C, ITM=15A Instantaneous measurement T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) Min. 0.2 Typ. Max. 20 1.5 1.5 1.5 1.5 30 30 30 50 50 70 Units µA V V V V mA mA mA V mA mA mA V/µs V/µs VGT Gate Trigger Voltage (Note 2) Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W VDRM (V) Test Condition Commutating voltage and current waveforms (inductive load) FKPF10N80 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 5.5A/ms 3. Peak off-state voltage VD = 400V Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C Time VD Quadrant Definitions for a Triac T2 Positive + (+) T2 (-) IGT GATE T1 IGT (-) T2 (-) T2 (+) IGT GATE T1 + IGT (+) T2 Quadrant II Quadrant I Quadrant III (-) IGT GATE T1 (+) IGT GATE T1 Quadrant IV T2 Negative ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 FKPF10N80 Typical Curves 50 160 SURGE ON-STATE CURRENT [A] 40 Tj=25 C O 140 ON-STATE CURRENT [A] 120 30 Tj=125 C 20 O 100 60 Hz 50 Hz 80 10 60 0 0.0 40 0.5 1.0 1.5 2.0 2.5 1 10 100 ON-STATE VOLTAGE [V] NUMBER OF CYCLES AT 50Hz AND 60Hz Figure 1. Maximum On-state Characteristics Figure 2. Rated Surge On-state Current 100 NORMALIZED GATE TRIGGER CURRENT [%] 1000 TYPICAL EXAMPLE VGM=10V GATE VOLTAGE [V] 10 PGM=5W PG(AV)=0.5W VGT=1.5V IGM=2A IⅠ 100 IⅡ, IⅢ 1 0.1 10 IRGTⅠ IFGTⅠ, IRGTⅢ 100 VGD=0.2V 1000 10000 10 -60 -40 -20 0 20 40 60 80 o 100 120 140 GATE CURRENT [mA] JUNCTION TEMPERATURE [ C] Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj NORMALIZED GATE TRIGGER VOLTAGE [%] 1000 100 TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE 10 100 Rth(j-c) [ C/W] o 1 0.1 10 -60 -40 -20 0 20 40 60 80 o 100 120 140 0.01 1E-3 0.01 0.1 1 10 100 JUNCTION TEMPERATURE [ C] TIME [sec] Figure 5. Gate Trigger Voltage vs Tj Figure 6. Transient Thermal Impedance ©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004 FKPF10N80 Typical Curves (Continues) 140 160 MAXIMUM ALLOWABLE AMBIENT o TEMPERATURE [ C] 120 100 CASE TEMPERATURE [ C] o ① NO HEAT SINK ② 30 × 30 × 2 mm AL HEAT SINK ③ 50 × 50 × 2 mm AL HEAT SINK ④ 70 × 70 × 2 mm AL HEAT SINK ⑤ 100 × 100 × 2 mm AL HEAT SINK 140 120 100 80 60 40 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 80 60 40 20 ① 0 0 2 ② 4 ③ 6 ④ 8 ⑤ 0 10 12 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 2 4 6 8 10 12 14 16 o RMS ON-STATE CURRENT [A] RMS ON-STATE CURRENT [A] Figure 7. Allowable Ambient Temperature vs Rms On-state Current Figure 8. Allowable Case Temperature vs Rms On-state Current NORMALIZED REPETIVITE OFF-STATE CURRENT [%] 16 ON-STATE POWER DISSIPATION [W] 14 12 10 8 6 4 2 0 360 CONDUCTION .


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