Document
FKPF10N80
FKPF10N80
Application Explanation
• • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool
2 1: T1 2: T2 3: Gate
3 1 2 3
TO-220F
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V
Symbol IT (RMS) ITSM I2t di/dt PGM PG (AV) VGM IGM TJ TSTG Viso
Parameter RMS On-State Current Surge On-State Current I2t for Fusing Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Isolation Voltage
Conditions Commercial frequency, sine full wave 360° conduction, TC=86°C Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz
Rating 10 100 110 50 50 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125
Units A A A A2s A/µs W W V A °C °C V
Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns
Ta=25°C, AC 1 minute, T1 T2 G terminal to case
1500
Thermal Characteristic
Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min. Typ. Max. 3.4 Units °C/W
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
FKPF10N80
Electrical Characteristics TC=25°C unless otherwise noted
Symbol IDRM VTM Parameter Repetieive Peak Off-State Current On-State Voltage I II III IGT VGD IH IL dv/dt (dv/dt)C Gate Trigger Current (Note 2) Gate Non-Trigger Voltage Holding Current Latching Current Critical Rate of Rise of Off-State Voltag Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125°C, Exponential Rise 10 300 I II III TJ=125°C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=12V, RL=20Ω VD=12V, RL=20Ω Test Condition VDRM applied TC=25°C, ITM=15A Instantaneous measurement T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) Min. 0.2 Typ. Max. 20 1.5 1.5 1.5 1.5 30 30 30 50 50 70 Units µA V V V V mA mA mA V mA mA mA V/µs V/µs
VGT
Gate Trigger Voltage (Note 2)
Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
VDRM (V)
Test Condition
Commutating voltage and current waveforms (inductive load)
FKPF10N80
1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 5.5A/ms 3. Peak off-state voltage VD = 400V
Supply Voltage (di/dt)C Main Current
Time
Time
Main Voltage (dv/dt)C
Time VD
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (-) IGT GATE T1 IGT (-) T2 (-) T2 (+) IGT GATE T1 + IGT (+) T2
Quadrant II
Quadrant I
Quadrant III
(-) IGT GATE T1
(+) IGT GATE T1
Quadrant IV
T2 Negative
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
FKPF10N80
Typical Curves
50
160
SURGE ON-STATE CURRENT [A]
40
Tj=25 C
O
140
ON-STATE CURRENT [A]
120
30
Tj=125 C
20
O
100
60 Hz 50 Hz
80
10
60
0 0.0
40
0.5
1.0
1.5
2.0
2.5
1
10
100
ON-STATE VOLTAGE [V]
NUMBER OF CYCLES AT 50Hz AND 60Hz
Figure 1. Maximum On-state Characteristics
Figure 2. Rated Surge On-state Current
100
NORMALIZED GATE TRIGGER CURRENT [%]
1000
TYPICAL EXAMPLE
VGM=10V
GATE VOLTAGE [V]
10
PGM=5W PG(AV)=0.5W VGT=1.5V IGM=2A
IⅠ
100
IⅡ, IⅢ
1
0.1 10
IRGTⅠ
IFGTⅠ, IRGTⅢ
100
VGD=0.2V
1000 10000
10 -60
-40
-20
0
20
40
60
80
o
100
120
140
GATE CURRENT [mA]
JUNCTION TEMPERATURE [ C]
Figure 3. Gate Characteristics
Figure 4. Gate Trigger Current vs Tj
NORMALIZED GATE TRIGGER VOLTAGE [%]
1000
100
TRANSIENT THERMAL IMPEDANCE
JUNCTION TO CASE
10
100
Rth(j-c) [ C/W]
o
1
0.1
10 -60
-40
-20
0
20
40
60
80
o
100
120
140
0.01 1E-3
0.01
0.1
1
10
100
JUNCTION TEMPERATURE [ C]
TIME [sec]
Figure 5. Gate Trigger Voltage vs Tj
Figure 6. Transient Thermal Impedance
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
FKPF10N80
Typical Curves (Continues)
140
160
MAXIMUM ALLOWABLE AMBIENT o TEMPERATURE [ C]
120
100
CASE TEMPERATURE [ C]
o
① NO HEAT SINK ② 30 × 30 × 2 mm AL HEAT SINK ③ 50 × 50 × 2 mm AL HEAT SINK ④ 70 × 70 × 2 mm AL HEAT SINK ⑤ 100 × 100 × 2 mm AL HEAT SINK
140 120 100 80 60 40 20
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
80
60
40
20
①
0 0 2
②
4
③
6
④
8
⑤
0
10 12
360 CONDUCTION RESISTIVE, INDUCTIVE LOADS
0 2 4 6 8 10 12 14 16
o
RMS ON-STATE CURRENT [A]
RMS ON-STATE CURRENT [A]
Figure 7. Allowable Ambient Temperature vs Rms On-state Current
Figure 8. Allowable Case Temperature vs Rms On-state Current
NORMALIZED REPETIVITE OFF-STATE CURRENT [%]
16
ON-STATE POWER DISSIPATION [W]
14 12 10 8 6 4 2 0
360 CONDUCTION .