MOS FET
MOS FET FKV560 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg Ratin...
Description
MOS FET FKV560 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg Ratings 50 ± 20 ± 60 ± 180 40 (Tc=25ºC) 150 –55 to +150 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 50 +10 –5 100 2.3 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max
(Ta=25ºC) Unit V µA µA V S mΩ pF pF pF ns ns ns ns V
External Dimensions FM20 (full-mold)
3.3±0.2 10.0±0.2 4.2±0.2
2.8 C 0.5
1.3 20.0
16.9±0.3 8.4±0.2 0.8 4.0±0.2
±0.2
a b
13.0 min
3.9
* PW 100µs, duty 1%
±0.2
1.35±0.15 1.35±0.15 0.85 –0.1
+0.2
2.54
2.54
0.45 –0.1
+0.2
2.4±0.2
2.2
±0.2
G D S
a) Type No. b) Lot No. (Unit: mm)
74
...
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