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FL12KM-12A Dataheets PDF



Part Number FL12KM-12A
Manufacturers Powerex Power Semiconductors
Logo Powerex Power Semiconductors
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Datasheet FL12KM-12A DatasheetFL12KM-12A Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL12KM-12A HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Œ  Ž 2.6 ± 0.2  q 10V DRIVE q VDSS ....

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MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL12KM-12A HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Œ  Ž 2.6 ± 0.2  q 10V DRIVE q VDSS ............................................................................... 600V q rDS (ON) (MAX) ............................................................. 0.94Ω q ID ......................................................................................... 12A Œ Œ GATE  DRAIN Ž SOURCE Ž TO-220FN APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 12 36 12 40 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Sep.1998 L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL12KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 0.80 4.80 8.0 1250 150 55 25 45 250 90 1.5 — Max. — ±10 1 4.0 0.94 5.64 — — — — — — — — 2.0 3.13 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw =10µs 40 101 7 5 3 2 100µs 1ms 10ms 30 20 100 7 5 3 2 10 10–1 TC = 25°C 0 0 50 100 150 200 7 5 Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25°C Pulse Test OUTPUT CHARACTERISTICS .


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