FLLD258

SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ISSUE 2 – SEPTEMBER 1995 7 1 FLLD258 2 1 3 2 3 SOT23 PART MARKING DETAIL – D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive Peak Reverse Voltage Average Rectified Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VRRM IF(AV) Ptot Tj:Tstg VALUE 100 250 3.0 330 -55 to +150 UNIT V mA A mW °C Non-Repetitive Peak Forward Current (t=1µ s) IFSM ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Current Reverse Recovery Time* Forward Recovery Time Diode Capacitance SYMBOL IR trr tfr Cd MIN. MAX. 3 5 400 10 4 Typ 0.9 1.4 UNIT CONDITIONS. µA nA VRRM=50V VRRM=100V, Tamb=150°C IF= IR=50 – 400mA IF=10mA VR=1V, f=1MHz IF=10mA, Rise time=5ns ± 20% IF=-200mA ns ns pF V V Forward Overshoot Voltage Vfr Forward Voltage VF *Time for IR to recover to 10% of IR peak For typical characteristics graphs see FLLD263 datasheet. 3 - 96 FLLD258 FLLD261 FLLD263 TYPICAL CHARACTERISTICS 25 20 15 10 5 0 0 20 40 60 80 VF - Forward Voltage (V) 100 IR v VF 3 - 99 ...