Document
Chip Schottky Barrier Diodes
FM120-M THRU FM1100-M
Silicon epitaxial planer type
Formosa MS
SOD-123
0.161(4.1) 0.146(3.7) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.063(1.6) 0.055(1.4)
0.071(1.8) 0.055(1.4)
0.110(2.8) 0.094(2.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDE C SOD-123 / MI NI SMA Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.04 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 98 120 +150
o
UNIT A A mA mA C / w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE 12 13 14 15 16 18 10
V RRM
(V)
*1
V RMS
(V) 14 21 28 35 42 56 70
*2
VR
*3
VF
*4
Operating temperature ( o C)
(V) 20 30 40 50 60 80 100
(V)
FM120-M FM130-M FM140-M FM150-M FM160-M FM180-M FM1100-M
20 30 40 50 60 80 100
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70 -55 to +150 0.85
*2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM120-M THRU FM1100-M)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
1.2 1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
FM 12 0M ~F M 14 0M
0.8
15 FM 12 FM
0.6 0.4 0.2 0 0 20 40 60 80
10 3.0 1.0
0-
FM 15 0M ~F M 16 0M
18 FM 0
100
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
30
01 FM M~ 40 -M
120
0 11 FM M~
140
0M
160
180
200
00 11 M ~F M -
-M
Tj=25 C Pulse Width 300us 1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
24
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
18
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
FORWARD VOLT AGE,(V)
12
6
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350 300 250 200 150 100 50 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
.