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FM180

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.01...


Formosa MS

FM180

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Description
Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 88 120 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SS12 SS13 SS14 SS15 SS16 SS18 S110 V RRM 20 30 40 50 60 80 *1 V RMS 14 21 28 35 42 56 70 *2 VR *3 VF *4 Operating temperature (o C) (V) FM120 FM130 FM140 FM150 FM160 FM180 FM1100 (V) (V) 20 30 40 50 60 80 100 (V) 0.50 -55 t...




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