FM18L08-70-P

Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits 10 year data retention at 85° C Unlimited read/write cycles NoDelay™ write Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM No battery concerns Monolithic reliability True surface mount solution, no rework steps Superior for moisture, shock, and vibration Resistant to negative voltage undershoots SRAM & EEPROM Compatible JEDEC 32Kx8 SRAM & EEPROM pinout 70 ns access time 130 ns cycle time Equal access & cycle time for reads and writes Low Power Operation 2.7V to 3.6V operation 15 mA active current 15 µA standby current Industry Standard Configuration Industrial temperature -40° C to +85° C 28-pin SOP or DIP Pin Configuration Description The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Fast-write time and practically unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM. In-system operation of the FM18L08 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FR...