FM24CL04

FM24CL04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits Unlimited Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface Up to 1 MHz maximum bus frequency Direct hardware replacement for EEPROM Low Power Operation 2.7V to 3.65V operation 75 µA Active Current (100 kHz) @ 3V 1 µA Standby Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 8-pin SOIC Description The FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM24CL04 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately. These capabilities make the FM24CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows mo...