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FM5820

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM5820 THRU FM5822 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.0...


Formosa MS

FM5820

File Download Download FM5820 Datasheet


Description
Chip Schottky Barrier Diodes FM5820 THRU FM5822 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 3.0 80 2.0 20 Rq JA CJ TSTG -55 55 300 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SK32 SK33 SK34 VRRM *1 VRMS *2 VR *3 VF *4 Operating temperature (oC) *1 Repetitive peak reverse voltage *2 RMS voltage (V) FM5820 FM5821 FM5822 20 30 40 (V) 14 21 28 (V) 20 30 40 (V) ...




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