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FM5820-A

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM5820-A THRU FM5822-A Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4)...


Formosa MS

FM5820-A

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Description
Chip Schottky Barrier Diodes FM5820-A THRU FM5822-A Silicon epitaxial planer type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDE C DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.15 gr am MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 3.0 80 2.0 20 Rq JA CJ TSTG -55 250 +150 80 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Operating temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SK32 SK33 SK34 VRRM 20 30 40 *1 VRMS 14 21 28 *2 VR *3 VF *4 Storage temperature (oC) *1 Repetitive peak reverse voltage *2 RMS voltage (V) FM5820 FM5821 FM5822 (V) (V) 20 30 40 (V) 0.475 0.500 0.525 -55 to +125 *3 ...




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