FMB100

FMB100 Discrete POWER & Signal Technologies FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .NA NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA =25°C unless otherwise noted Parameter Value 45 75 6.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA= 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB100 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB100 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Co...