FMB200
Discrete POWER & Signal Technologies
FMB200
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .N2
PNP Multi-Chip Ge...
FMB200
Discrete POWER & Signal Technologies
FMB200
C2 E1 C1
B2 E2
pin #1 B1
SuperSOT™-6
Mark: .N2
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
45 60 6.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
FMB200 700 5.6 180
Units
mW mW/°C °C/W
© 1998 Fairchild Semiconductor Corporation
FMB200
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage...