FFB2907A / FMBT2907A / MMPQ2907A
Discrete POWER & Signal Technologies
FFB2907A
E2 B2 C1
FMB2907A
C2 E1 C1
MMPQ2907A
...
FFB2907A / FMBT2907A / MMPQ2907A
Discrete POWER & Signal Technologies
FFB2907A
E2 B2 C1
FMB2907A
C2 E1 C1
MMPQ2907A
E2 B2 E3 B3 E4 B4
E1 C2 B1
pin #1
B1
B2 E2
pin #1 B1
E1
SC70-6
Mark: .2F
SuperSOT™-6
Mark: .2F
SOIC-16
C1
C2 C1
C3 C2
C4 C4 C3
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
60 60 5.0 600 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415
Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240
Units
mW mW/°C °C/W °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FFB2907A / FMBT2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(...