FMB3946

FMB3946 Discrete Power & Signal Technologies FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 B2 E2 B1 Note: The " . " (dot) signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23 (NPN) and Process 66 (PNP). Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current TA = 25°C unless otherwise noted Value 40 40 5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristics Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max 700 5.6 180 Units mW mW/°C °C/W © 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmb3946.lwpPr23&66(Y2) FMB3946 (continued) NPN & PNP Complementary Dual Transistor Electrical Chara...