FMBA0656
Discrete Power & Signal Technologies
FMBA0656
C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " ....
FMBA0656
Discrete Power & Signal Technologies
FMBA0656
C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 B2 E2 B1
Transistor 1 is
NPN device,
transistor 2 is
PNP device.
NPN &
PNP Complementary Dual
Transistor SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33 (
NPN) and Process 73 (
PNP).
Absolute Maximum Ratings
Symbol VCEO VCBO VEBO IC PD TSTG TJ RθJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (continuous) Power Dissipation @Ta = 25°C* Storage Temperature Range Junction Temperature
TA
= 25°C unless otherwise noted
Value 80 80 4 500 0.7 -55 to +150 150 180
Units V V V mA W °C °C °C/W
Thermal Resistance, Junction to Ambient
For each
transistor, Pd = 350mW.
*Pd total, for both
transistors.
Electrical Characteristics
Symbol BVCEO BVCBO BVEBO Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage
TA
= 25°C unless otherwise noted
Test Conditions Ic = 1.0 mA Ic = 100 uA Ie = 100 uA
Min 80 80 4
Max
Units V V V
© 1997 Fairchild Semiconductor Corporation
Page 1 of 2
fmba0656.lwpPr33&73(Y3)
FMBA0656
NPN &
PNP Complementary Dual
Transistor
(continued)
Electrical Characteristics
Symbol ICBO ICEO hFE VCE(sat) VBE(on) Parameter Collector Cutoff Current Collector Cutoff Current DC Current Gain
TA = 25°C unless otherwise noted
Test Condi...