FMBA0656

FMBA0656 Discrete Power & Signal Technologies FMBA0656 C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 B2 E2 B1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33 (NPN) and Process 73 (PNP). Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC PD TSTG TJ RθJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (continuous) Power Dissipation @Ta = 25°C* Storage Temperature Range Junction Temperature TA = 25°C unless otherwise noted Value 80 80 4 500 0.7 -55 to +150 150 180 Units V V V mA W °C °C °C/W Thermal Resistance, Junction to Ambient For each transistor, Pd = 350mW. *Pd total, for both transistors. Electrical Characteristics Symbol BVCEO BVCBO BVEBO Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage TA = 25°C unless otherwise noted Test Conditions Ic = 1.0 mA Ic = 100 uA Ie = 100 uA Min 80 80 4 Max Units V V V © 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmba0656.lwpPr33&73(Y3) FMBA0656 NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics Symbol ICBO ICEO hFE VCE(sat) VBE(on) Parameter Collector Cutoff Current Collector Cutoff Current DC Current Gain TA = 25°C unless otherwise noted Test Condi...