FME-220A

100V, 20A Schottky barrier diode in TO220F package FME-220A sAbsolute maximum ratings Parameter VRM IF(AV) IFSM I2 t Tj Tstg Ratings 100 20 120 72 – 40 to +150 – 40 to +150 Unit V A A A2 s °C °C 10ms Half-cycle sinewave Single Shot Conditions s Electrical characteristics Parameter VF IR H.IR Rth( j-c) Ratings 0.85 1.0max 100max 4.0max Unit V mA mA °C/W IF =10A VR =VRM (Ta = 25°C) Conditions Tj =150°C, VR =VRM Junction-to-case 25 IF(AV) –PF Characteristic 100 Tj =150ºC t /T = 1/6 Forward current IF (A) t T VF – IF Characteristic (Typ.) 20 Average forward current IF(AV) (A) TC –IF(AV) Characteristic t /T = 1/6 VR =0V t /T = 1/2 Forward power loss PF (W) 20 10 16 D.C. 15 t /T = 1/ 3, Sinewave 1 12 t /T = 1/ 3, Sinewave 10 t /T = 1/2 5 D.C. 0.1 Ta=150°C 125°C 100°C 60°C 25°C 0 0.4 0.8 1.2 1.6 8 Tj =150ºC t T 0 50 100 150 Case temperature TC (°C) 0.01 4 0 0 5 10 15 20 Average forward current IF(AV) (A) 0.001 Forward voltage VF (V) 0 18 16 Reverse power loss PR (W) VR –PR Characteristic Tj =150ºC t T VR – IR Characteristic (Typ.) 100 10 Reverse current IR (mA) 1 0.1 0.01 0.001 60°C 125°C 100°C Average forward current IF(AV) (A) Ta=150°C 20 TC –IF(AV) Characteristic Sinewave VR =100V 1– t /T=1/2 1–t /T=1/3 14 12 10 8 6 4 2 0 0 1– t /T = 5/6 1– t /T = 2/3 1– t /T = 1/2 16 12 1–t /T=1/6 8 Tj =150ºC t T 0 50 100 D.C. 25°C 4 Sinewave 20 40 60 80 100 0.0001 0 20 40 60 80 100 Reverse voltage VR (V) 0 150 Reverse voltage VR (V) Case temperature...