100V, 30A Schottky barrier diode in TO220F package
FME-230A
sAbsolute maximum ratings
Parameter VRM IF(AV) IFSM I2 t Tj...
100V, 30A
Schottky barrier diode in TO220F package
FME-230A
sAbsolute maximum ratings
Parameter VRM IF(AV) IFSM I2 t Tj Tstg Ratings 100 30 150 112 – 40 to +150 – 40 to +150 Unit V A A A2 s °C °C 10ms Half-cycle sinewave Single Shot Conditions
s Electrical characteristics
Parameter VF IR H.IR Rth( j-c) Ratings 0.85 1.5max 150max 4.0max Unit V mA mA °C/W IF =15A VR =VRM
(Ta = 25°C) Conditions
Tj =150°C, VR =VRM Junction-to-case
35 30 Forward power loss PF (W) 25 20 15 10
IF(AV) –PF Characteristic
100 Tj =150ºC t T
VF – IF Characteristic (Typ.)
30 Average forward current IF(AV) (A) 25
TC –IF(AV) Characteristic
VR =0V
t /T = 1/2 t /T = 1/6 20 15 10 Tj =150ºC 5 0 t T 0 50 100 150 Case temperature TC (°C) t /T = 1/ 3, Sinewave D.C.
t /T = 1/6 t /T = 1/ 3, Sinewave Forward current IF (A)
10
1
0.1 Ta=150°C 125°C 100°C 60°C 25°C 0 0.4 0.8 1.2 1.6
t /T = 1/2 5 0 0 5 10 15 20 25 30 Average forward current IF(AV) (A) D.C.
0.01
0.001 Forward voltage VF (V)
30 25 20
VR –PR Characteristic
Tj =150ºC t T
VR – IR Characteristic (Typ.)
100 10 Reverse current IR (mA) 125°C 100°C 1 0.1 0.01 0.001 60°C Average forward current IF(AV) (A) Ta=150°C 30 25
TC –IF(AV) Characteristic
Sinewave 1– t /T=1/2 t T
VR =100V Tj =150ºC
Reverse power loss PR (W)
1– t /T = 5/6
20 1–t /T=1/3 15 10 5 0 1–t /T=1/6 0 50 100 150 Case temperature TC (°C) D.C.
1– t /T = 2/3 15 1– t /T = 1/2 10 5 0 0 20 40 60 Sinewave 80 100
25°C
0.0001 0 20 40 60 80 100 Reverse voltage VR (V)
Reverse voltage ...
